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This paper presents the first demonstration and comparison of two identical oscillator circuits employing piezoelectric zinc oxide (ZnO) microelectromechanical systems (MEMS) resonators, implemented on conventional printed-circuit-board (PCB) and three-dimensional (3D)-printed acrylonitrile butadiene styrene (ABS) substrates. Both oscillators operate simultaneously at dual frequencies (260 MHz and 437 MHz) without the need for additional circuitry. The MEMS resonators, fabricated on silicon-on-insulator (SOI) wafers, exhibit high-quality factors (Q), ensuring superior phase noise performance. Experimental results indicate that the oscillator packaged using 3D-printed chip-carrier assembly achieves a 2–3 dB improvement in phase noise compared to the PCB-based oscillator, attributed to the ABS substrate’s lower dielectric loss and reduced parasitic effects at radio frequency (RF). Specifically, phase noise values between −84 and −77 dBc/Hz at 1 kHz offset and a noise floor of −163 dBc/Hz at far-from-carrier offset were achieved. Additionally, the 3D-printed ABS-based oscillator delivers notably higher output power (4.575 dBm at 260 MHz and 0.147 dBm at 437 MHz). To facilitate modular characterization, advanced packaging techniques leveraging precise 3D-printed encapsulation with sub-100 μm lateral interconnects were employed. These ensured robust packaging integrity without compromising oscillator performance. Furthermore, a comparison between two transistor technologies—a silicon germanium (SiGe) heterojunction bipolar transistor (HBT) and an enhancement-mode pseudomorphic high-electron-mobility transistor (E-pHEMT)—demonstrated that SiGe HBT transistors provide superior phase noise characteristics at close-to-carrier offset frequencies, with a significant 11 dB improvement observed at 1 kHz offset. These results highlight the promising potential of 3D-printed chip-carrier packaging techniques in high-performance MEMS oscillator applications. 

Observational and modeling studies indicate significant changes in the global hydroclimate in the twentieth and early twenty-first centuries due to anthropogenic climate change. In this review, we analyze the recent literature on the observed changes in hydroclimate attributable to anthropogenic forcing, the physical and biological mechanisms underlying those changes, and the advantages and limitations of current detection and attribution methods. Changes in the magnitude and spatial patterns of precipitation minus evaporation (P–E) are consistent with increased water vapor content driven by higher temperatures. While thermodynamics explains most of the observed changes, the contribution of dynamics is not yet well constrained, especially at regional and local scales, due to limitations in observations and climate models. Anthropogenic climate change has also increased the severity and likelihood of contemporaneous droughts in southwestern North America, southwestern South America, the Mediterranean, and the Caribbean. An increased frequency of extreme precipitation events and shifts in phenology has also been attributed to anthropogenic climate change. While considerable uncertainties persist on the role of plant physiology in modulating hydroclimate and vice versa, emerging evidence indicates that increased canopy water demand and longer growing seasons negate the water-saving effects from increased water-use efficiency. 

Abstract The semiconductor tracker (SCT) is one of the tracking systems for charged particles in the ATLAS detector. It consists of 4088 silicon strip sensor modules.During Run 2 (2015–2018) the Large Hadron Collider delivered an integrated luminosity of 156 fb -1 to the ATLAS experiment at a centre-of-mass proton-proton collision energy of 13 TeV. The instantaneous luminosity and pile-up conditions were far in excess of those assumed in the original design of the SCT detector.Due to improvements to the data acquisition system, the SCT operated stably throughout Run 2.It was available for 99.9% of the integrated luminosity and achieved a data-quality efficiency of 99.85%.Detailed studies have been made of the leakage current in SCT modules and the evolution of the full depletion voltage, which are used to study the impact of radiation damage to the modules.